Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 274-279

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Key words: 开关特性, 安全工作区, 双MOS门极控制EST

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

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      张昌利, 陈治明, 闵源基, 金相哲, 朴钟文, 金南均, 金垠东. 双MOS门极控制的EST的开关特性和安全工作区[J]. 半导体学报(英文版), 2000, 21(3): 274-279.
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      张昌利, 陈治明, 闵源基, 金相哲, 朴钟文, 金南均, 金垠东. 双MOS门极控制的EST的开关特性和安全工作区[J]. 半导体学报(英文版), 2000, 21(3): 274-279.

      • Received Date: 2015-08-20

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