Chin. J. Semicond. > 1996, Volume 17 > Issue 1 > 27-34
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全离子注入自对准难熔金属氮化物复合栅GaAs MESFET技术研究

高玉芝，张利春，尹红坤，宁宝俊

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(1): 27-34
      高玉芝，张利春，尹红坤，宁宝俊. 全离子注入自对准难熔金属氮化物复合栅GaAs MESFET技术研究[J]. 半导体学报(英文版), 1996, 17(1): 27-34.
      Citation:
      高玉芝，张利春，尹红坤，宁宝俊. 全离子注入自对准难熔金属氮化物复合栅GaAs MESFET技术研究[J]. 半导体学报(英文版), 1996, 17(1): 27-34.
      shu

      • Received Date: 2015-08-18

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