Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1534-1537
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高能铒离子注入硅单晶的辐射损伤及其退火行为

李玉国 and 薛成山

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Key words: 高能离子注入, 损伤分布, 退火

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1534-1537
      李玉国, 薛成山. 高能铒离子注入硅单晶的辐射损伤及其退火行为[J]. 半导体学报(英文版), 2001, 22(12): 1534-1537.
      Citation:
      李玉国, 薛成山. 高能铒离子注入硅单晶的辐射损伤及其退火行为[J]. 半导体学报(英文版), 2001, 22(12): 1534-1537.
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      • Received Date: 2015-08-20

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