| Citation: |
Zhang Xin'an, Zhang Jingwen, Wang Dong, Bi Zhen, Bian Xuming, Zhang Weifeng, Hou Xun. Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate[J]. Journal of Semiconductors, 2007, 28(S1): 306-308.
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Zhang X, Zhang J W, Wang D, Bi Z, Bian X M, Zhang W F, Hou X. Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 306.
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Enhancement Mode Thin Film Transistor with Nitrogen-Doped ZnO Channel Layer Fabricated on SiO2/Si Substrate
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Abstract
Nitrogen-doped ZnO film is deposited on SiO2/P-Si substrate by L-MBE in the mixed gas of NH3 and O2. XRD measurement shows the film has high crystalline quality and high c-axis preferential orientation even doped with nitrogen. The FWHM of rocking curve of ZnO(0002)plane is only 1.89º. Then，a bottom.gate type thin film transistor with nitrogen doped ZnO as the active channel layer and SiO2 severed as insulator is fabricated.Electrical measurement shows the device opcrates in enhancement mode and exhibits all on/off ratio of 104. The threshold voltage is 5.15V and the channel mobility oil the order of 2.66cm2/(V·s) is determined.-
Keywords:
- ：ZnO thin film,
- L-MBE,
- thin film transistor,
- channel mobility
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References
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Proportional views
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