Chin. J. Semicond. > 1997, Volume 18 > Issue 6 > 408-411
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GaAs(100)同质外延表面相变的动态过程研究

刘兴权 , 陆卫 , 马朝晖 , 陈效双 , 乔怡敏 , 万明芳 and 沈学础

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(6): 408-411
      刘兴权, 陆卫, 马朝晖, 陈效双, 乔怡敏, 万明芳, 沈学础. GaAs(100)同质外延表面相变的动态过程研究[J]. 半导体学报(英文版), 1997, 18(6): 408-411.
      Citation:
      刘兴权, 陆卫, 马朝晖, 陈效双, 乔怡敏, 万明芳, 沈学础. GaAs(100)同质外延表面相变的动态过程研究[J]. 半导体学报(英文版), 1997, 18(6): 408-411.
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      • Received Date: 2015-08-19

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