Chin. J. Semicond. > 1990, Volume 11 > Issue 12 > 889-895

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电子辐照N型LPE-GaAs层中复合中心能级的研究

胡雨生 , 汪乐 and 陈正秀

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(12): 889-895
      胡雨生, 汪乐, 陈正秀. 电子辐照N型LPE-GaAs层中复合中心能级的研究[J]. 半导体学报(英文版), 1990, 11(12): 889-895.
      Citation:
      胡雨生, 汪乐, 陈正秀. 电子辐照N型LPE-GaAs层中复合中心能级的研究[J]. 半导体学报(英文版), 1990, 11(12): 889-895.
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      • Received Date: 2015-08-19

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