Chin. J. Semicond. > 2003, Volume 24 > Issue 7 > 758-762
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兼容标准CMOS工艺的高压器件设计与模拟

刘奎伟 , 韩郑生 , 钱鹤 , 陈则瑞 , 于洋 , 饶竞时 and 仙文岭

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Key words: 高压CMOS, 0.5μm, 兼容工艺, 模拟

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(7): 758-762
      刘奎伟, 韩郑生, 钱鹤, 陈则瑞, 于洋, 饶竞时, 仙文岭. 兼容标准CMOS工艺的高压器件设计与模拟[J]. 半导体学报(英文版), 2003, 24(7): 758-762.
      Citation:
      刘奎伟, 韩郑生, 钱鹤, 陈则瑞, 于洋, 饶竞时, 仙文岭. 兼容标准CMOS工艺的高压器件设计与模拟[J]. 半导体学报(英文版), 2003, 24(7): 758-762.
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      • Received Date: 2015-08-20

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