Chin. J. Semicond. > 1998, Volume 19 > Issue 5 > 355-361
|

CONTENTS

氟在多晶硅栅中迁移特性的分析与模拟

张廷庆 , 李建军 , 刘家璐 and 赵元富

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2450 Times PDF downloads: 1114 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: Online: Published: 01 May 1998

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1998  >  19(5): 355-361
      张廷庆, 李建军, 刘家璐, 赵元富. 氟在多晶硅栅中迁移特性的分析与模拟[J]. 半导体学报(英文版), 1998, 19(5): 355-361.
      Citation:
      张廷庆, 李建军, 刘家璐, 赵元富. 氟在多晶硅栅中迁移特性的分析与模拟[J]. 半导体学报(英文版), 1998, 19(5): 355-361.
      shu

      • Received Date: 2015-08-18

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return