Chin. J. Semicond. > 2002, Volume 23 > Issue 3 > 301-304
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应用于非破坏性读出铁电存储器的MFIS FET制备及其特性

颜雷 , 林殷茵 , 汤庭鳌 , 黄维宁 and 姜国宝

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Key words: MF(I)S铁电存储器, 不挥发铁电存储器, 不挥发非破坏性读出, 铁电薄膜

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(3): 301-304
      颜雷, 林殷茵, 汤庭鳌, 黄维宁, 姜国宝. 应用于非破坏性读出铁电存储器的MFIS FET制备及其特性[J]. 半导体学报(英文版), 2002, 23(3): 301-304.
      Citation:
      颜雷, 林殷茵, 汤庭鳌, 黄维宁, 姜国宝. 应用于非破坏性读出铁电存储器的MFIS FET制备及其特性[J]. 半导体学报(英文版), 2002, 23(3): 301-304.
      shu

      • Received Date: 2015-08-19

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