Chin. J. Semicond. > 1996, Volume 17 > Issue 3 > 191-195
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p－GaAs／n－GaAs MOCVD外延层少子扩散长度的液结光伏谱测量和分析

陈朝，王健华

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    Received: 18 August 2015 Revised: Online: Published: 01 March 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(3): 191-195
      陈朝，王健华. p－GaAs／n－GaAs MOCVD外延层少子扩散长度的液结光伏谱测量和分析[J]. 半导体学报(英文版), 1996, 17(3): 191-195.
      Citation:
      陈朝，王健华. p－GaAs／n－GaAs MOCVD外延层少子扩散长度的液结光伏谱测量和分析[J]. 半导体学报(英文版), 1996, 17(3): 191-195.
      shu

      • Received Date: 2015-08-18

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