Chin. J. Semicond. > 1996, Volume 17 > Issue 1 > 71-75
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高温退火硅单晶中氧和氮杂质性质

杨德仁，阙端麟

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    Received: 18 August 2015 Revised: Online: Published: 01 January 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(1): 71-75
      杨德仁，阙端麟. 高温退火硅单晶中氧和氮杂质性质[J]. 半导体学报(英文版), 1996, 17(1): 71-75.
      Citation:
      杨德仁，阙端麟. 高温退火硅单晶中氧和氮杂质性质[J]. 半导体学报(英文版), 1996, 17(1): 71-75.
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      • Received Date: 2015-08-18

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