Citation: |
Tan Kaizhou, Feng Jian, Liu Yong, Xu Shiliu, Yang Mohua, Li Zhaoji, Zhang Zhengfan, Liu Yukui, He Kaiquan. A Novel Semi-Insulation Bonding SOI Structure[J]. Journal of Semiconductors, 2006, 27(10): 1828-1831.
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Tan K Z, Feng J, Liu Y, Xu S L, Yang M H, Li Z J, Zhang Z F, Liu Y K, He K Q. A Novel Semi-Insulation Bonding SOI Structure[J]. Chin. J. Semicond., 2006, 27(10): 1828.
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A Novel Semi-Insulation Bonding SOI Structure
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Abstract
A novel semi-insulation bonding SOI structure that is realized by LPCVD and introducing an epitaxial interim polysilicon layer is reported.The integrality percentage of this new wafer structure is more than 85%.The contact specific resistance of the Si-Si bonding interface is less than 5E-4Ω·cm2.It can be widely applied in high-voltage ICs,high-reliability ICs,MEMS,and OEIC. -
References
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Proportional views