Chin. J. Semicond. > 1984, Volume 5 > Issue 2 > 144-151
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用红外吸收的光调制技术测量Hg_(1-x)Cd_xTe的载流子寿命

凌仲赓 and 陆培德

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(2): 144-151
      凌仲赓, 陆培德. 用红外吸收的光调制技术测量Hg_(1-x)Cd_xTe的载流子寿命[J]. 半导体学报(英文版), 1984, 5(2): 144-151.
      Citation:
      凌仲赓, 陆培德. 用红外吸收的光调制技术测量Hg_(1-x)Cd_xTe的载流子寿命[J]. 半导体学报(英文版), 1984, 5(2): 144-151.
      shu

      • Received Date: 2015-08-19

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