Chin. J. Semicond. > 1986, Volume 7 > Issue 6 > 665-667
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Ga_xIn_(1-x)P_yAs_(1-y)及Ga_xIn_(1-x)P_yAs_(1-y)/InP(110)异质结界面的电子能带结构

徐至中

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(6): 665-667
      徐至中. Ga_xIn_(1-x)P_yAs_(1-y)及Ga_xIn_(1-x)P_yAs_(1-y)/InP(110)异质结界面的电子能带结构[J]. 半导体学报(英文版), 1986, 7(6): 665-667.
      Citation:
      徐至中. Ga_xIn_(1-x)P_yAs_(1-y)及Ga_xIn_(1-x)P_yAs_(1-y)/InP(110)异质结界面的电子能带结构[J]. 半导体学报(英文版), 1986, 7(6): 665-667.
      shu

      • Received Date: 2015-08-20

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