Chin. J. Semicond. > 1989, Volume 10 > Issue 10 > 799-804

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一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器

朱龙德 , G.A.B.Feak , J.M.Ballantyne , D.K.Wagner and P.L.Tihanyi

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(10): 799-804
      朱龙德, G.A.B.Feak, J.M.Ballantyne, D.K.Wagner, P.L.Tihanyi. 一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器[J]. 半导体学报(英文版), 1989, 10(10): 799-804.
      Citation:
      朱龙德, G.A.B.Feak, J.M.Ballantyne, D.K.Wagner, P.L.Tihanyi. 一种GaAs/GaAlAs分别限制单量子阱锁相列阵激光器[J]. 半导体学报(英文版), 1989, 10(10): 799-804.
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      • Received Date: 2015-08-19

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