Chin. J. Semicond. > 1990, Volume 11 > Issue 4 > 243-252

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杂质和空位对AlAs/GaAs超晶格电学性质的影响

王恩哥 , 章立源 and 王怀玉

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(4): 243-252
      王恩哥, 章立源, 王怀玉. 杂质和空位对AlAs/GaAs超晶格电学性质的影响[J]. 半导体学报(英文版), 1990, 11(4): 243-252.
      Citation:
      王恩哥, 章立源, 王怀玉. 杂质和空位对AlAs/GaAs超晶格电学性质的影响[J]. 半导体学报(英文版), 1990, 11(4): 243-252.
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      • Received Date: 2015-08-19

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