J. Semicond. > 2008, Volume 29 > Issue 12 > 2398-2402

PAPERS

Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory

Sun Yedan, Li Yun, Qiu Danfeng, Cao Liqiang, Pan Lijia, Pu Lin and Shi Yi

+ Author Affiliations

PDF

Abstract: We investigate the electrical performance of cross point bistable memory affected by the nanoparticles formed at the organic/electrode interface.The middle medium is 2-amino-4,5-dicyanoimidazole (AIDCN) film fabricated by vacuum evaporation,and the anode and cathode metals of the device are ITO glass and Al,respectively.The microstructure features of the SnOx nanoparticles,which were formed due to the chemical reaction between the tin oxide in ITO and AIDCN,have been investigated using transition electron microscopy (TEM) and X-ray photoelectron spectrum (XPS),etc.The tin element at the AIDCN/ITO interface mainly arises from the tin segregation layer near the surface of ITO.It is demonstrated that the interface of ITO and AIDCN is of the crucial importance of the electrical behavior.Through this kind of in-situ reaction at an interface,a cross point memory with on-off ratio over 1E11 orders are obtained.

Key words: cross point memoryelectrical bistabilitysolid-solid chemical reactionnanoparticles

1

A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

C. Usha, P. Vimala

Journal of Semiconductors, 2019, 40(12): 122901. doi: 10.1088/1674-4926/40/12/122901

2

Enhanced room temperature ferromagnetism in Cr-doped ZnO nanoparticles prepared by auto-combustion method

Khizar-ul Haq, M. Irfan, Muhammad Masood, Murtaza Saleem, Tahir Iqbal, et al.

Journal of Semiconductors, 2018, 39(4): 043001. doi: 10.1088/1674-4926/39/4/043001

3

Visible light photocatalytic dye decomposition behaviour of solid state reaction grown Zn2TiO4 nanoparticles

Lizina Khatua, Rajashree Sahoo, Pravakar Satapathy, Rudrashish Panda, Susanta Kumar Das, et al.

Journal of Semiconductors, 2018, 39(12): 123002. doi: 10.1088/1674-4926/39/12/123002

4

Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique

B. Shougaijam, R. Swain, C. Ngangbam, T.R. Lenka

Journal of Semiconductors, 2017, 38(5): 053001. doi: 10.1088/1674-4926/38/5/053001

5

Zinc-doped CdS nanoparticles synthesized by microwave-assisted deposition

Abideen A. Ibiyemi, Ayodeji O Awodugba, Olusola Akinrinola, Abass A Faremi

Journal of Semiconductors, 2017, 38(9): 093002. doi: 10.1088/1674-4926/38/9/093002

6

Green preparation of Au nanoparticles for electrochemical detection of H2O2

Wenchao Wang, Ye Ji, Yong Zhang, Ziying Wang, Tong Zhang, et al.

Journal of Semiconductors, 2016, 37(1): 013003. doi: 10.1088/1674-4926/37/1/013003

7

Correlated barrier hopping of CuO nanoparticles

Jiji Koshy, M. Soosen Samuel, Anoop Chandran, K. C. George

Journal of Semiconductors, 2015, 36(12): 122003. doi: 10.1088/1674-4926/36/12/122003

8

Solid State Physics View of Liquid State Chemistry Ⅲ. Electrical Conductance of Pure and Impure Water

Binbin Jie, Chihtang Sah

Journal of Semiconductors, 2014, 35(4): 041001. doi: 10.1088/1674-4926/35/4/041001

9

Solid State Physics View of Liquid State Chemistry Ⅱ. Electrical Capacitance of Pure and Impure Water

Binbin Jie, Chihtang Sah

Journal of Semiconductors, 2014, 35(2): 021001. doi: 10.1088/1674-4926/35/2/021001

10

Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad

Aodong He, Bo Liu, Zhitang Song, Yegang Lü, Juntao Li, et al.

Journal of Semiconductors, 2013, 34(7): 076002. doi: 10.1088/1674-4926/34/7/076002

11

Correlation between electrical conductivity-optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin films

Said Benramache, Okba Belahssen, Abderrazak Guettaf, Ali Arif

Journal of Semiconductors, 2013, 34(11): 113001. doi: 10.1088/1674-4926/34/11/113001

12

Structural, morphological, dielectrical and magnetic properties of Mn substituted cobalt ferrite

S. P. Yadav, S. S. Shinde, A. A. Kadam, K. Y. Rajpure

Journal of Semiconductors, 2013, 34(9): 093002. doi: 10.1088/1674-4926/34/9/093002

13

ZnO nanoparticles as a luminescent down-shifting layer for photosensitive devices

Yao Zhu, A. Apostoluk, Shibin Liu, S. Daniele, B. Masenelli, et al.

Journal of Semiconductors, 2013, 34(5): 053005. doi: 10.1088/1674-4926/34/5/053005

14

Solid State Physics View of Liquid State Chemistry——Electrical conduction in pure water

Binbin Jie, Chihtang Sah

Journal of Semiconductors, 2013, 34(12): 121001. doi: 10.1088/1674-4926/34/12/121001

15

Optical and electrical properties of electrochemically deposited polyaniline-CeO2 hybrid nanocomposite film

Anees A. Ansari, M. A. M. Khan, M. Naziruddin Khan, Salman A. Alrokayan, M. Alhoshan, et al.

Journal of Semiconductors, 2011, 32(4): 043001. doi: 10.1088/1674-4926/32/4/043001

16

Modeling and experimental research on a removal mechanism during chemical mechanical polishing at the molecular scale

An Wei, Zhao Yongwu, Wang Yongguang

Journal of Semiconductors, 2010, 31(11): 116005. doi: 10.1088/1674-4926/31/11/116005

17

Optical bistability in a two-section InAs quantum-dot laser

Jiang Liwen, Ye Xiaoling, Zhou Xiaolong, Jin Peng, Lü Xueqin, et al.

Journal of Semiconductors, 2010, 31(11): 114012. doi: 10.1088/1674-4926/31/11/114012

18

Fabrication and Memory Characteristics of a New Organic Thin Film Device

Guo Peng, Ji Xin, Dong Yuanwei, Lü Yinxiang, Xu Wei, et al.

Journal of Semiconductors, 2008, 29(1): 140-143.

19

Electronic Structure of Semiconductor Nanocrystals

Li Jingbo, Wang Linwang, Wei Suhuai

Chinese Journal of Semiconductors , 2006, 27(2): 191-196.

20

An Analytical Model for the Surface Electrical Field Distribution and Optimization of Bulk-Silicon Double RESURF Devices

Li Qi, Li Zhaoji, Zhang Bo

Chinese Journal of Semiconductors , 2006, 27(7): 1177-1182.

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3526 Times PDF downloads: 1628 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 20 July 2008 Online: Published: 01 December 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Sun Yedan, Li Yun, Qiu Danfeng, Cao Liqiang, Pan Lijia, Pu Lin, Shi Yi. Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory[J]. Journal of Semiconductors, 2008, 29(12): 2398-2402. ****Sun Y D, Li Y, Qiu D F, Cao L Q, Pan L J, Pu L, Shi Y. Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory[J]. J. Semicond., 2008, 29(12): 2398.
      Citation:
      Sun Yedan, Li Yun, Qiu Danfeng, Cao Liqiang, Pan Lijia, Pu Lin, Shi Yi. Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory[J]. Journal of Semiconductors, 2008, 29(12): 2398-2402. ****
      Sun Y D, Li Y, Qiu D F, Cao L Q, Pan L J, Pu L, Shi Y. Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory[J]. J. Semicond., 2008, 29(12): 2398.

      Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-29
      • Revised Date: 2008-07-20
      • Published Date: 2008-12-09

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return