| Citation: |
Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming. A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz[J]. Journal of Semiconductors, 2008, 29(10): 1898-1901.
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Jin Z, Cheng W, Liu X Y, Xu A H, Qi M. A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz[J]. J. Semicond., 2008, 29(10): 1898.
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A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz
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Abstract
A non-micro-air-bridge InP-based heterojunction bipolar transistor (HBT) is fabricated.A very small emitter side etching (＜100nm) is developed and makes a submicron InP-based HBT possible.The current gain cutoff frequency is as high as 238GHz for the submicron HBT with an emitter area of 0.8μm×15μm due to the reduction of emitter width.A base-collector over-etching technology is developed,resulting in a reduction of base-collector junction area and an increase in the maximum oscillation frequency.A very high Kirk current density of 3.1mA/μm2 is obtained.To the best of our knowledge,the current gain cutoff frequency is the highest among three-terminal devices in China and the Kirk current density is also the highest in HBTs reported in China.This is very helpful for the application of HBTs in ultra high-speed circuits.-
Keywords:
- InP,
- heterojunction bipolar transistor,
- planarization,
- high frequency
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References
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Proportional views
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