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A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz

Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai and Qi Ming

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Abstract: A non-micro-air-bridge InP-based heterojunction bipolar transistor (HBT) is fabricated.A very small emitter side etching (<100nm) is developed and makes a submicron InP-based HBT possible.The current gain cutoff frequency is as high as 238GHz for the submicron HBT with an emitter area of 0.8μm×15μm due to the reduction of emitter width.A base-collector over-etching technology is developed,resulting in a reduction of base-collector junction area and an increase in the maximum oscillation frequency.A very high Kirk current density of 3.1mA/μm2 is obtained.To the best of our knowledge,the current gain cutoff frequency is the highest among three-terminal devices in China and the Kirk current density is also the highest in HBTs reported in China.This is very helpful for the application of HBTs in ultra high-speed circuits.

Key words: InPheterojunction bipolar transistorplanarizationhigh frequency

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    Received: 18 August 2015 Revised: 19 May 2008 Online: Published: 01 October 2008

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      Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming. A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz[J]. Journal of Semiconductors, 2008, 29(10): 1898-1901. ****Jin Z, Cheng W, Liu X Y, Xu A H, Qi M. A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz[J]. J. Semicond., 2008, 29(10): 1898.
      Citation:
      Jin Zhi, Cheng Wei, Liu Xinyu, Xu Anhuai, Qi Ming. A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz[J]. Journal of Semiconductors, 2008, 29(10): 1898-1901. ****
      Jin Z, Cheng W, Liu X Y, Xu A H, Qi M. A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz[J]. J. Semicond., 2008, 29(10): 1898.

      A Submicron InGaAs/InP Heterojunction Bipolar Transistor with ft of 238GHz

      • Received Date: 2015-08-18
      • Accepted Date: 2008-02-26
      • Revised Date: 2008-05-19
      • Published Date: 2008-11-11

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