Chin. J. Semicond. > 2003, Volume 24 > Issue 10 > 1099-1102
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超薄顶层硅SOI衬底上高k栅介质ZrO_2的性能

章宁琳 , 宋志棠 , 沈勤我 and 林成鲁

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Key words: 超高真空电子束蒸发法, 全耗尽SOIMOSFET, 高k栅介质, ZrO2

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(10): 1099-1102
      章宁琳, 宋志棠, 沈勤我, 林成鲁. 超薄顶层硅SOI衬底上高k栅介质ZrO_2的性能[J]. 半导体学报(英文版), 2003, 24(10): 1099-1102.
      Citation:
      章宁琳, 宋志棠, 沈勤我, 林成鲁. 超薄顶层硅SOI衬底上高k栅介质ZrO_2的性能[J]. 半导体学报(英文版), 2003, 24(10): 1099-1102.
      shu

      • Received Date: 2015-08-20

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