
Abstract: The threshold voltage of A1GaN/GaN heterostructure field effect transistor (A1GaN/GaN HFET) has been deter. mined by the capacitance·voltage(C-V)characteristics of Schottky gate contacts。The measured and calculated current.volt. age(I-V)characteristics for A1GaN/GaN HFET show that the threshold voltage for A1GaN/GaN HFET can be gotten by the maximum point of the differential C-V characteristics.
Key words: AIGaN/GaN HFET, threshold voltage, C-V curves
Article views: 2062 Times PDF downloads: 459 Times Cited by: 0 Times
Received: 27 May 2016 Revised: Online: Published: 01 January 2007
Citation: |
Lin Zhaojun, Zhao Jianzhi, Zhang Min. Threshold Voltage of AIGaN/GaN HFET[J]. Journal of Semiconductors, 2007, 28(S1): 422-425.
****
Lin Z J, Zhao J Z, Zhang M. Threshold Voltage of AIGaN/GaN HFET[J]. Chin. J. Semicond., 2007, 28(S1): 422.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2