Chin. J. Semicond. > 1998, Volume 19 > Issue 7 > 521-527
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原位确定GaAsMESFET沟道的掺杂浓度分布和迁移率分布

张友渝 , 程兆年 and 张俊岳

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    Received: 18 August 2015 Revised: Online: Published: 01 July 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(7): 521-527
      张友渝, 程兆年, 张俊岳. 原位确定GaAsMESFET沟道的掺杂浓度分布和迁移率分布[J]. 半导体学报(英文版), 1998, 19(7): 521-527.
      Citation:
      张友渝, 程兆年, 张俊岳. 原位确定GaAsMESFET沟道的掺杂浓度分布和迁移率分布[J]. 半导体学报(英文版), 1998, 19(7): 521-527.
      shu

      • Received Date: 2015-08-18

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