Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

Lao Yanfeng; Cao Chunfang; Wu Huizhen; Cao Meng; Liu Cheng; Xie Zhengsheng; Gong Qian

Article Navigation > Journal of Semiconductors > 2008 > 29(11): 2286-2291

Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng, Gong Qian. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. Journal of Semiconductors, 2008, 29(11): 2286-2291. ****Lao Y F, Cao C F, Wu H Z, Cao M, Liu C, Xie Z S, Gong Q. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. J. Semicond., 2008, 29(11): 2286.

Citation:

Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng, Gong Qian. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. Journal of Semiconductors, 2008, 29(11): 2286-2291. ****

Lao Y F, Cao C F, Wu H Z, Cao M, Liu C, Xie Z S, Gong Q. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. J. Semicond., 2008, 29(11): 2286.

Citation:

Lao Y F, Cao C F, Wu H Z, Cao M, Liu C, Xie Z S, Gong Q. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. J. Semicond., 2008, 29(11): 2286.

PDF( 1472 KB)

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China
State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

Received Date: 2015-08-18
Accepted Date: 2008-04-26
Revised Date: 2008-06-10
Published Date: 2008-11-11

Abstract

Abstract

We designed and fabricated a vertical-cavity surface-emitting laser (VCSEL) that consisted of an InP-based active layer with InAsP/InGaAsP strain-compensated multi-quantum wells,SiO2/TiO2 dielectric film,and GaAs/AlAs semiconductor distributed Bragg reflectors (DBRs).The InP-based active layers and GaAs-based DBRs were integrated using wafer-direct bonding techniques.Then,devices were successfully fabricated upon related device processing such as current-aperture definition using wet-etching undercut techniques and deposition of dielectric DBR,etc.The threshold current of the VCSEL is 13.5mA and the wavelength of the single mode is 1288.6nm.
- vertical-cavity surface-emitting laser,
- wafer-direct bonding,
- tunnel junction

FullText(HTML)

References(0)

References

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

Abstract

References

Proportional views

Catalog

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content