| Citation: |
Xiao Hongling, Wang Xiaoliang, Han Qin, Wang Junxi, Zhang Nanhong, Xu Yingqiang, Liu Hongxin, Zeng Yiping, Li Jinmin, Wu Ronghan. Effect of V／III Flux Ratio and Growth Temperature on Indium Droplet Formation During RF-MBE Growth of InN[J]. Journal of Semiconductors, 2005, 26(S1): 16-19.
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Xiao H L, Wang X L, Han Q, Wang J X, Zhang N H, Xu Y Q, Liu H X, Zeng Y P, Li J M, Wu R H. Effect of V／III Flux Ratio and Growth Temperature on Indium Droplet Formation During RF-MBE Growth of InN[J]. Chin. J. Semicond., 2005, 26(13): 16.
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Effect of V／III Flux Ratio and Growth Temperature on Indium Droplet Formation During RF-MBE Growth of InN
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Abstract
Due to the low dissociation temperature and high equilibrium vapor pressure of nitrogen,the preparation of indium nitride (InN) epilayers is very difficult.Especially,Indium (In) droplets formation during epitaxial growth of InN films is a serious problem for achieving high quality films.In this paper,the effect of both V／III flux ratio and growth temperature on the formation of indium droplets and the surface morphology of the InN films is studied by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE).It is found that the density of indium droplets decreases with increasing in V／III flux ratio and growth temperature.The possible mechanism for In droplets formation was suggested based on these experiments.Finally,single crystal InN films without In droplets on the surface are achieved by optimizing the V／III flux ratio and growth temperature.-
Keywords:
- InN,
- RF-MBE,
- X-ray diffraction
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References
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Proportional views
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