Chin. J. Semicond. > 1991, Volume 12 > Issue 4 > 253-256

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Si_3N_4膜pH-ISFET输出特性研究

虞惇 , 魏亚东 and 王贵华

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(4): 253-256
      虞惇, 魏亚东, 王贵华. Si_3N_4膜pH-ISFET输出特性研究[J]. 半导体学报(英文版), 1991, 12(4): 253-256.
      Citation:
      虞惇, 魏亚东, 王贵华. Si_3N_4膜pH-ISFET输出特性研究[J]. 半导体学报(英文版), 1991, 12(4): 253-256.
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      • Received Date: 2015-08-19

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