Chin. J. Semicond. > 1990, Volume 11 > Issue 5 > 355-359
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用SF_6-N_2混合气的反应离子刻蚀制作WSi_x微米结构

程美乔 , 傅绍云 and 李建中

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(5): 355-359
      程美乔, 傅绍云, 李建中. 用SF_6-N_2混合气的反应离子刻蚀制作WSi_x微米结构[J]. 半导体学报(英文版), 1990, 11(5): 355-359.
      Citation:
      程美乔, 傅绍云, 李建中. 用SF_6-N_2混合气的反应离子刻蚀制作WSi_x微米结构[J]. 半导体学报(英文版), 1990, 11(5): 355-359.
      shu

      • Received Date: 2015-08-19

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