Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs

Bi Jingfeng; Zhao Jianhua; Deng Jiajun; Zheng Yuhong; Wang Weizhu; Li Shushen

Article Navigation > Journal of Semiconductors > 2007 > 28(S1): 204-207

Bi Jingfeng, Zhao Jianhua, Deng Jiajun, Zheng Yuhong, Wang Weizhu, Li Shushen. Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs[J]. Journal of Semiconductors, 2007, 28(S1): 204-207. ****Bi J F, Zhao J H, Deng J J, Zheng Y H, Wang W Z, Li S S. Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs[J]. Chin. J. Semicond., 2007, 28(S1): 204.

Citation:

Bi J F, Zhao J H, Deng J J, Zheng Y H, Wang W Z, Li S S. Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs[J]. Chin. J. Semicond., 2007, 28(S1): 204.

Citation:

Bi J F, Zhao J H, Deng J J, Zheng Y H, Wang W Z, Li S S. Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs[J]. Chin. J. Semicond., 2007, 28(S1): 204.

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Growth，Structure and Magnetic Property of zb-CrAs Films on Different Buffers of InGaAs and GaAs

State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China
Department of Physics，University of Science and Technology of China, Hefei 230026, China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China and State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

Received Date: 2016-05-27
Published Date: 2016-04-28

Abstract

Abstract

Zincblende CrAs thin films were grown on InGaAs and GaAs buffer layers by using low-temperature molecular beam epitaxy respectively.High-resolution cross-sectional transmission electron micrographs show that the CrAs thin films grown on both InGaAs and GaAs buffer layers keep zincblende.The curves of remanent magnetization versus temperature indicate that the room·temperature ferromagnetism exists in these two films.
- half-metallic ferromagnet,
- room-temperature ferromagnetism,
- molecular-beam epitaxy

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