Chin. J. Semicond. > 1985, Volume 6 > Issue 2 > 128-131
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用RDLTS方法研究P型硅中Yb的空穴发射率与电场的关系

鲁永令 , 傅春寅 and 曾树荣

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(2): 128-131
      鲁永令, 傅春寅, 曾树荣. 用RDLTS方法研究P型硅中Yb的空穴发射率与电场的关系[J]. 半导体学报(英文版), 1985, 6(2): 128-131.
      Citation:
      鲁永令, 傅春寅, 曾树荣. 用RDLTS方法研究P型硅中Yb的空穴发射率与电场的关系[J]. 半导体学报(英文版), 1985, 6(2): 128-131.
      shu

      • Received Date: 2015-08-20

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