Chin. J. Semicond. > 1995, Volume 16 > Issue 6 > 407-412
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P－型HgCdTe MIS结构反型层激发态子能带结构研究

刘坤，褚君浩，李标，汤定元

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(6): 407-412
      刘坤，褚君浩，李标，汤定元. P－型HgCdTe MIS结构反型层激发态子能带结构研究[J]. 半导体学报(英文版), 1995, 16(6): 407-412.
      Citation:
      刘坤，褚君浩，李标，汤定元. P－型HgCdTe MIS结构反型层激发态子能带结构研究[J]. 半导体学报(英文版), 1995, 16(6): 407-412.
      shu

      • Received Date: 2015-08-19

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