Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source

Liu Zhaojun; Meng Zhiguo; Zhao Sunyun; Wong Man; Kwok H S; Wu Chunya; Xiong Shaozhen

Article Navigation > Journal of Semiconductors > 2008 > 29(10): 2009-2013

Liu Zhaojun, Meng Zhiguo, Zhao Sunyun, Wong Man, Kwok H S, Wu Chunya, Xiong Shaozhen. Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source[J]. Journal of Semiconductors, 2008, 29(10): 2009-2013. ****Liu Z J, Meng Z G, Zhao S Y, Wo N M, Kwok H S, Wu C Y, Xiong S Z. Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source[J]. J. Semicond., 2008, 29(10): 2009.

Citation:

Liu Z J, Meng Z G, Zhao S Y, Wo N M, Kwok H S, Wu C Y, Xiong S Z. Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source[J]. J. Semicond., 2008, 29(10): 2009.

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Metal Induced Lateral Crystallization Poly-Si Thin Film Transistors of Self-Released Nickel Source

Institute of Photo-Electronics,Nankai University,Tianjin 300071,China
Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China
Institute of Photo-Electronics,Nankai University,Tianjin 300071,China
Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China
Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China
Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China
Department of Electrical and Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China
Institute of Photo-Electronics,Nankai University,Tianjin 300071,China
Institute of Photo-Electronics,Nankai University,Tianjin 300071,China

Received Date: 2015-08-18
Accepted Date: 2008-04-10
Revised Date: 2008-05-29
Published Date: 2008-11-11

Abstract

Abstract

Nickel-silicon alloy target is used as a source of sputtering;a new type of nickel source,called a self-released nickel source,is fabricated.Self-released nickel source can control the crystallization rate efficiently and the obtained poly-Si material has a low level of nickel residue and high quality.p-type thin film transistors are fabricated using this kind of poly-Si as active islands.They have good performance and lower leakage current.
- metal induced lateral crystallization,
- poly-silicon thin film,
- low temperature preparation,
- annealing treatment

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