Chin. J. Semicond. > 2003, Volume 24 > Issue 3 > 255-259
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与标准CMOS完全兼容的硅基LED器件模拟(英文)

孙增辉 , 陈弘达 , 毛陆虹 , 崔增文 and 高鹏

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Key words: 反向击穿硅p-n结, 硅基光发射器件, 击穿电压, CMOS

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(3): 255-259
      孙增辉, 陈弘达, 毛陆虹, 崔增文, 高鹏. 与标准CMOS完全兼容的硅基LED器件模拟(英文)[J]. 半导体学报(英文版), 2003, 24(3): 255-259.
      Citation:
      孙增辉, 陈弘达, 毛陆虹, 崔增文, 高鹏. 与标准CMOS完全兼容的硅基LED器件模拟(英文)[J]. 半导体学报(英文版), 2003, 24(3): 255-259.
      shu

      • Received Date: 2015-08-20

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