Chin. J. Semicond. > 2003, Volume 24 > Issue 10 > 1040-1043
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Co在Si(100)表面化学吸附的电子结构和性质

危书义 , 马丽 , 杨宗献 , 戴宪起 and 张开明

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Key words: 化学吸附, 钴, 硅, 低指数单晶面, 金属薄膜

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(10): 1040-1043
      危书义, 马丽, 杨宗献, 戴宪起, 张开明. Co在Si(100)表面化学吸附的电子结构和性质[J]. 半导体学报(英文版), 2003, 24(10): 1040-1043.
      Citation:
      危书义, 马丽, 杨宗献, 戴宪起, 张开明. Co在Si(100)表面化学吸附的电子结构和性质[J]. 半导体学报(英文版), 2003, 24(10): 1040-1043.
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      • Received Date: 2015-08-20

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