Chin. J. Semicond. > 2004, Volume 25 > Issue 2 > 165-169
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直流放电辅助脉冲激光沉积Si基GaN薄膜的结构特征

童杏林 , 郑启光 , 胡兵 , 秦应雄 , 席再军 and 于本海

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Key words: 脉冲激光沉积, 直流放电, GaN薄膜, AlN缓冲层

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(2): 165-169
      童杏林, 郑启光, 胡兵, 秦应雄, 席再军, 于本海. 直流放电辅助脉冲激光沉积Si基GaN薄膜的结构特征[J]. 半导体学报(英文版), 2004, 25(2): 165-169.
      Citation:
      童杏林, 郑启光, 胡兵, 秦应雄, 席再军, 于本海. 直流放电辅助脉冲激光沉积Si基GaN薄膜的结构特征[J]. 半导体学报(英文版), 2004, 25(2): 165-169.
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      • Received Date: 2015-08-19

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