Chin. J. Semicond. > 2003, Volume 24 > Issue 3 > 312-317
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SOI结构P型SiGe沟道混合模式晶体管器件模型研究

夏克军 , 李树荣 , 王纯 , 郭维廉 , 郑云光 , 陈培毅 and 钱佩信

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Key words: BMHMT, 器件模型, SiGe, SOI

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(3): 312-317
      夏克军, 李树荣, 王纯, 郭维廉, 郑云光, 陈培毅, 钱佩信. SOI结构P型SiGe沟道混合模式晶体管器件模型研究[J]. 半导体学报(英文版), 2003, 24(3): 312-317.
      Citation:
      夏克军, 李树荣, 王纯, 郭维廉, 郑云光, 陈培毅, 钱佩信. SOI结构P型SiGe沟道混合模式晶体管器件模型研究[J]. 半导体学报(英文版), 2003, 24(3): 312-317.
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      • Received Date: 2015-08-20

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