
PAPERS
Abstract: This paper presents a high precision CMOS opamp suitable for ISFET readout.The opamp is tailored to provide a constant bias condition for ISFET as part of the readout circuits and,hence,is compatible for single chip integration with the sensor.A continuous time auto-zero stabilization technique is studied and employed,with the aim of suppressing the low frequency noises,including the offset voltage,1/f noise,and temperature drift.The design is based on a 0.35μm CMOS process.With a 3.3V power supply,it maintains a DC open loop gain of more than 100dB and an offset voltage of around 11μV,while the overall power dissipation is only 1.48mW.With this opamp,a pH microsensor is constructed,of which the functionality is verified by experimental tests.
Key words: high precision, auto-zero, operational amplifier, ISFET microsensor
1 |
A 2.69 ppm/°C bandgap reference with 42 ppm/V line sensitivity for battery management system Jing Wang, Feixiang Zhang, Zhiyuan He, Hui Zhang, Lin Cheng, et al. Journal of Semiconductors. doi: 10.1088/1674-4926/24120045 |
2 |
Balasaheb M. Palve, Sandesh R. Jadkar, Habib M. Pathan Journal of Semiconductors, 2017, 38(6): 063003. doi: 10.1088/1674-4926/38/6/063003 |
3 |
Kiran Diwate, Amit Pawbake, Sachin Rondiya, Rupali Kulkarni, Ravi Waykar, et al. Journal of Semiconductors, 2017, 38(2): 023001. doi: 10.1088/1674-4926/38/2/023001 |
4 |
Design and analysis of 20 Gb/s inductorless limiting amplifier in 65 nm CMOS technology Rui He, Jianfei Xu, Na Yan, Jie Sun, Liqian Bian, et al. Journal of Semiconductors, 2014, 35(10): 105002. doi: 10.1088/1674-4926/35/10/105002 |
5 |
A high power active circulator using GaN MMIC power amplifiers Liming Gu, Wenquan Che, Fan-Hsiu Huang, Hsien-Chin Chiu Journal of Semiconductors, 2014, 35(11): 115003. doi: 10.1088/1674-4926/35/11/115003 |
6 |
A novel precision curvature-compensated bandgap reference Zhou Zekun, Ming Xin, Zhang Bo, Li Zhaoji Journal of Semiconductors, 2010, 31(1): 015010. doi: 10.1088/1674-4926/31/1/015010 |
7 |
High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit Wu Chia-Song, Lin Tah-Yeong, Wu Hsien-Ming Journal of Semiconductors, 2010, 31(2): 025002. doi: 10.1088/1674-4926/31/2/025002 |
8 |
A high precision high PSRR bandgap reference with thermal hysteresis protection Yang Yintang, Li Yani, Zhu Zhangming Journal of Semiconductors, 2010, 31(9): 095010. doi: 10.1088/1674-4926/31/9/095010 |
9 |
Design and implementation of a low-pass filter for microsensor signal processing Wang Zhuping, Zhong Shun'an, Ding Yingtao, Wang Xiaoqing Journal of Semiconductors, 2010, 31(12): 125002. doi: 10.1088/1674-4926/31/12/125002 |
10 |
1-Gb/s zero-pole cancellation CMOS transimpedance amplifier for Gigabit Ethernet applications Huang Beiju, Zhang Xu, Chen Hongda Journal of Semiconductors, 2009, 30(10): 105005. doi: 10.1088/1674-4926/30/10/105005 |
11 |
High-performance micromachined gyroscope with a slanted suspension cantilever Xiao Dingbang, Wu Xuezhong, Hou Zhanqiang, Chen Zhihua, Dong Peitao, et al. Journal of Semiconductors, 2009, 30(4): 044012. doi: 10.1088/1674-4926/30/4/044012 |
12 |
A novel fully differential telescopic operational transconductance amplifier Li Tianwang, Ye Bo, Jiang Jinguang Journal of Semiconductors, 2009, 30(8): 085002. doi: 10.1088/1674-4926/30/8/085002 |
13 |
A novel low-voltage operational amplifier for low-power pipelined ADCs Fan Mingjun, Ren Junyan, Guo Yao, Li Ning, Ye Fan, et al. Journal of Semiconductors, 2009, 30(1): 015009. doi: 10.1088/1674-4926/30/1/015009 |
14 |
Annealing behavior of radiation damage in JFET-input operational amplifiers Zheng Yuzhan, Lu Wu, Ren Diyuan, Wang Yiyuan, Guo Qi, et al. Journal of Semiconductors, 2009, 30(5): 055001. doi: 10.1088/1674-4926/30/5/055001 |
15 |
A high precision programmable bandgap voltage reference design for high resolution ADC Zhu Tiancheng, Yao Suying, Li Binqiao Journal of Semiconductors, 2009, 30(7): 075005. doi: 10.1088/1674-4926/30/7/075005 |
16 |
A constant-gm and high-slew-rate operational amplifier for an LCD driver Lai Xinquan, Li Xinlin, Ye Qiang, Yuan Bing, Li Xianrui, et al. Journal of Semiconductors, 2009, 30(12): 125002. doi: 10.1088/1674-4926/30/12/125002 |
17 |
A Novel Operational Amplifier Phase Reversal Protection Circuit Wang Xihu, Wu Longsheng, Liu Youbao Journal of Semiconductors, 2008, 29(9): 1832-1836. |
18 |
A Three-Stage Operational Amplifier for a Wide Range of Capacitive Loads Hu Jingjing, Huijsing J H, Ren Junyan Chinese Journal of Semiconductors , 2007, 28(11): 1685-1689. |
19 |
High Power SiGe X-Band (8~10GHz) Heterojunction Bipolar Transistors and Amplifiers Ma Zhenqiang, Wang Guogong, Jiang Ningyue, Ponchak G E, Alterovitz S A, et al. Chinese Journal of Semiconductors , 2006, 27(2): 270-275. |
20 |
Simulation of a Monolithic Integrated CMOS Preamplifier for Neural Recordings Sui Xiaohong, Liu Jinbin, Gu Ming, Pei Weihua, Chen Hongda, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2275-2280. |
Article views: 2751 Times PDF downloads: 972 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 26 November 2007 Online: Published: 01 April 2008
Citation: |
Zhang Chong, Yang Haigang, Wei Jinbao. A High Precision CMOS Opamp Suitable for ISFET Readout[J]. Journal of Semiconductors, 2008, 29(4): 686-692.
****
Zhang C, Yang H G, Wei J B. A High Precision CMOS Opamp Suitable for ISFET Readout[J]. J. Semicond., 2008, 29(4): 686.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2