Chin. J. Semicond. > 1990, Volume 11 > Issue 7 > 527-532
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Ⅱ-Ⅵ族化合物(Hg_(1-x)Cd_xTe)非晶薄膜的半导体性质

曹宝成 , 刘明 and 戴国才

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(7): 527-532
      曹宝成, 刘明, 戴国才. Ⅱ-Ⅵ族化合物(Hg_(1-x)Cd_xTe)非晶薄膜的半导体性质[J]. 半导体学报(英文版), 1990, 11(7): 527-532.
      Citation:
      曹宝成, 刘明, 戴国才. Ⅱ-Ⅵ族化合物(Hg_(1-x)Cd_xTe)非晶薄膜的半导体性质[J]. 半导体学报(英文版), 1990, 11(7): 527-532.
      shu

      • Received Date: 2015-08-19

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