LETTERS
Bai Song, Chen Gang, Zhang Tao, Li Zheyang, Wang Hao, Jiang Youquan, Han Chunlin and Chen Chen
Abstract: 4H-SiC MESFETs are fabricated on semi-insulating SiC substrates.Key processes are optimized to obtain better device performance.A microwave power amplifier is demonstrated from a 1mm SiC MESFET for S band operation.When operated at a drain voltage of 64V,the amplifier shows an output power of 4.09W,a gain of 9.3dB,and a power added efficiency of 31.3%.
Key words: 4H-SiC, MESFET, microwave, power amplifier
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Article views: 3908 Times PDF downloads: 1598 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 23 August 2006 Online: Published: 01 January 2007
| Citation: |
Bai Song, Chen Gang, Zhang Tao, Li Zheyang, Wang Hao, Jiang Youquan, Han Chunlin, Chen Chen. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Journal of Semiconductors, 2007, 28(1): 10-13.
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Bai S, Chen G, Zhang T, Li Z Y, Wang H, Jiang Y Q, Han C L, Chen C. Fabrication of SiC MESFETs for Microwave Power Applications[J]. Chin. J. Semicond., 2007, 28(1): 10.
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