Chin. J. Semicond. > 1995, Volume 16 > Issue 1 > 77-80

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GaAs／AlAs超晶格Γ－X级联隧穿导致的电场畴

张耀辉，杨小平，刘伟，崔丽秋，江德生

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(1): 77-80
      张耀辉，杨小平，刘伟，崔丽秋，江德生. GaAs／AlAs超晶格Γ－X级联隧穿导致的电场畴[J]. 半导体学报(英文版), 1995, 16(1): 77-80.
      Citation:
      张耀辉，杨小平，刘伟，崔丽秋，江德生. GaAs／AlAs超晶格Γ－X级联隧穿导致的电场畴[J]. 半导体学报(英文版), 1995, 16(1): 77-80.
      shu

      • Received Date: 2015-08-19

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