Chin. J. Semicond. > 1999, Volume 20 > Issue 12 > 1059-1063
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Cd Zn Te晶体中位错分布特性研究

顾惠明 , 杨建荣 , 陈新强 and 何力

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(12): 1059-1063
      顾惠明, 杨建荣, 陈新强, 何力. Cd Zn Te晶体中位错分布特性研究[J]. 半导体学报(英文版), 1999, 20(12): 1059-1063.
      Citation:
      顾惠明, 杨建荣, 陈新强, 何力. Cd Zn Te晶体中位错分布特性研究[J]. 半导体学报(英文版), 1999, 20(12): 1059-1063.
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      • Received Date: 2015-08-19

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