Citation: |
Gian Jiajun, Xu Bo, Chen Yonghai, Ye Xiaoling, Han Qin, Wang Zhanguo. Optical Characteristics of Strained Self-Organized InAs/GaAs Ouantum Dot Materials and Laser Diodes[J]. Journal of Semiconductors, 2003, 24(S1): 51-55.
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Gian J, Xu B, Chen Y H, Ye X L, Han Q, Wang Z G. Optical Characteristics of Strained Self-Organized InAs/GaAs Ouantum Dot Materials and Laser Diodes[J]. Chin. J. Semicond., 2003, 24(S1): 51.
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Optical Characteristics of Strained Self-Organized InAs/GaAs Ouantum Dot Materials and Laser Diodes
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Abstract
Photoluminescence ( PLD and electrolumineScence (ELD properties of strained self-assembled InAS/GaAS quantum dots ( GDSD structure grown by molecular-beam epitaxy technique are presented. A comparative analysis is made of optical characteristics for laSer diodes emitting at 1. 08pm With InAS/GaAS GDS in the active region. The maximum CW output of 2. 74W ( two facets and internal quantum efficiency of 87% are achieved at room temperature in 100pm Wide Strips and 1. 6mm cavity length laser diode with uncoated facets. -
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