Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1481-1485

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高倍增GaAs光电导开关的光激发电荷畴模型(英文)

施卫

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Key words: 光电导开关, 高倍增模式, 光激发电荷畴

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1481-1485
      施卫. 高倍增GaAs光电导开关的光激发电荷畴模型(英文)[J]. 半导体学报(英文版), 2001, 22(12): 1481-1485.
      Citation:
      施卫. 高倍增GaAs光电导开关的光激发电荷畴模型(英文)[J]. 半导体学报(英文版), 2001, 22(12): 1481-1485.
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      • Received Date: 2015-08-20

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