Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 304-308
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用三点弯方法研究微氮硅单晶机械强度

王淦 , 杨德仁 , 李东升 , 杨辉 , 李立本 and 阙端麟

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Key words: 硅, 掺杂, 机械强度

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 304-308
      王淦, 杨德仁, 李东升, 杨辉, 李立本, 阙端麟. 用三点弯方法研究微氮硅单晶机械强度[J]. 半导体学报(英文版), 2001, 22(3): 304-308.
      Citation:
      王淦, 杨德仁, 李东升, 杨辉, 李立本, 阙端麟. 用三点弯方法研究微氮硅单晶机械强度[J]. 半导体学报(英文版), 2001, 22(3): 304-308.
      shu

      • Received Date: 2015-08-20

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