Chin. J. Semicond. > 1995, Volume 16 > Issue 5 > 339-343
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用GSMBE法生长匹配型GaInAsP／InP材料及量子阱、面发射激光器结构的研究

林世鸣

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(5): 339-343
      林世鸣. 用GSMBE法生长匹配型GaInAsP／InP材料及量子阱、面发射激光器结构的研究[J]. 半导体学报(英文版), 1995, 16(5): 339-343.
      Citation:
      林世鸣. 用GSMBE法生长匹配型GaInAsP／InP材料及量子阱、面发射激光器结构的研究[J]. 半导体学报(英文版), 1995, 16(5): 339-343.
      shu

      • Received Date: 2015-08-19

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