PAPERS
Abstract: A new lifetime control technique-localized platinum lifetime control (LPLC) is introduced.Silicon samples are implanted with 550keV protons at dosages from 1×1013 to 5×1014cm-2.Subsequently,platinum diffusion in silicon is performed at 700 or 750℃ for 15 or 30min,respectively.Then the in-diffused platinum into damaged regions of the proton-implanted silicon is investigated by use of deep-level transient spectroscopy (DLTS).Finally,for all of the LPLC samples,the distribution of the in-diffused substitutional platinum agrees well with the damage distribution resulting from the low-dosage proton implantation.Also,the diodes show a very low leakage current even at elevated temperatures while keeping the major advantages of ion irradiation devices,including low turn-off loss and soft recovery.
Key words: platinum, DLTS, hydrogen implantation, interstitial
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Received: 20 August 2015 Revised: Online: Published: 01 February 2006
| Citation: |
Jia Yunpeng, Zhang Bin, Sun Yuechen, Kang Baowei. Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages[J]. Journal of Semiconductors, 2006, 27(2): 294-297.
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Jia Y P, Zhang B, Sun Y C, Kang B W. Axial Local Lifetime Control in High-Voltage Diodes Based on Proximity Gettering of Platinum by Proton-Implantation Damages[J]. Chin. J. Semicond., 2006, 27(2): 294.
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