Abstract: A new lifetime control technique-localized platinum lifetime control (LPLC) is introduced.Silicon samples are implanted with 550keV protons at dosages from 1×10¹³ to 5×10¹⁴cm^-2.Subsequently,platinum diffusion in silicon is performed at 700 or 750℃ for 15 or 30min,respectively.Then the in-diffused platinum into damaged regions of the proton-implanted silicon is investigated by use of deep-level transient spectroscopy (DLTS).Finally,for all of the LPLC samples,the distribution of the in-diffused substitutional platinum agrees well with the damage distribution resulting from the low-dosage proton implantation.Also,the diodes show a very low leakage current even at elevated temperatures while keeping the major advantages of ion irradiation devices,including low turn-off loss and soft recovery.

Key words: platinum, DLTS, hydrogen implantation, interstitial