Abstract: A novel SiGeC/Si heterojunction structure for p-i-n power diodes is presented.Based on analysis of the physical characteristics of SiGeC alloys,models of the physical parameters are given,and the effects on the device characteristics of the incorporation of carbon are simulated and analyzed with MEDICI.The reverse leakage current is also compared for devices with different p+ region thicknesses.The simulation results indicate that the reverse leakage current and the dependence of the device characteristics on a critical thickness are reduced greatly,and the stability is improved by the incorporation of carbon atoms into SiGe/Si diodes,when the forward I-V and reverse recovery characteristics remain constant.

Key words: SiGeC/Si heterojunction, power diodes, reverse recovery, leakage current