Chin. J. Semicond. > 2001, Volume 22 > Issue 8 > 1011-1014
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CONTENTS

等离子体氧化制备超薄SiO_2层的性质

鲍云 , 蒋明 , 李伟 , 马忠元 , 黄少云 , 王立 , 黄信凡 and 陈坤基

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Key words: 超薄氧化, 等离子氧化, SiO2

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(8): 1011-1014
      鲍云, 蒋明, 李伟, 马忠元, 黄少云, 王立, 黄信凡, 陈坤基. 等离子体氧化制备超薄SiO_2层的性质[J]. 半导体学报(英文版), 2001, 22(8): 1011-1014.
      Citation:
      鲍云, 蒋明, 李伟, 马忠元, 黄少云, 王立, 黄信凡, 陈坤基. 等离子体氧化制备超薄SiO_2层的性质[J]. 半导体学报(英文版), 2001, 22(8): 1011-1014.
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      • Received Date: 2015-08-20

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