| Citation: |
Wen Yuhua, Tang Jiyu, Zhao Chuanzhen, Wu Liangzhen, Kong Yunting, Tang Lili, Liu Chao, Wu Lifeng, Li Shunfang, Chen Junfang. Bandgap Energies in Strain-Free Ga1-xInxNyAs-y/GaAs QWs After Annealing[J]. Journal of Semiconductors, 2008, 29(1): 105-109.
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Wen Y H, Tang J Y, Zhao C Z, Wu L Z, Kong Y T, Tang L L, Liu C, Wu L F, Li S F, Chen J F. Bandgap Energies in Strain-Free Ga1-xInxNyAs-y/GaAs QWs After Annealing[J]. J. Semicond., 2008, 29(1): 105.
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Bandgap Energies in Strain-Free Ga1-xInxNyAs-y/GaAs QWs After Annealing
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Abstract
According to the annealing-induced changes of an N-centered nearest-neighbor (NN) environment in Ga1-xInxNyAs-y quaternary alloys,we present a statistical distributing model of the binary bonds in a thermodynamics equilibrium state.Then,the parameter r,the calculated number of NN In atoms per N atom,is introduced into the BAC empirical model.Finally,bandgap energies in strain-free Ga1-xInxNyAs-y/GaAs QWs are calculated by discussing the boundary conditions for the electron wavefunction in the BAC model.-
Keywords:
- GaInNAs/GaAs,
- quantum well,
- bandgap energy,
- annealing
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References
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