PAPERS
Wen Yuhua, Tang Jiyu, Zhao Chuanzhen, Wu Liangzhen, Kong Yunting, Tang Lili, Liu Chao, Wu Lifeng, Li Shunfang and Chen Junfang
Abstract: According to the annealing-induced changes of an N-centered nearest-neighbor (NN) environment in Ga1-xInxNyAs-y quaternary alloys,we present a statistical distributing model of the binary bonds in a thermodynamics equilibrium state.Then,the parameter r,the calculated number of NN In atoms per N atom,is introduced into the BAC empirical model.Finally,bandgap energies in strain-free Ga1-xInxNyAs-y/GaAs QWs are calculated by discussing the boundary conditions for the electron wavefunction in the BAC model.
Key words: GaInNAs/GaAs, quantum well, bandgap energy, annealing
| 1 |
Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes Nuo Xu, Gaoqiang Deng, Haotian Ma, Shixu Yang, Yunfei Niu, et al. Journal of Semiconductors, 2024, 45(4): 042501. doi: 10.1088/1674-4926/45/4/042501 |
| 2 |
Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode A. Menani, L. Dehimi, S. Dehimi, F. Pezzimenti Journal of Semiconductors, 2020, 41(6): 062301. doi: 10.1088/1674-4926/41/6/062301 |
| 3 |
B. Shougaijam, R. Swain, C. Ngangbam, T.R. Lenka Journal of Semiconductors, 2017, 38(5): 053001. doi: 10.1088/1674-4926/38/5/053001 |
| 4 |
Differential optical gain in a GaInN/AlGaN quantum dot K. Jaya Bala, A. John Peter Journal of Semiconductors, 2017, 38(6): 062001. doi: 10.1088/1674-4926/38/6/062001 |
| 5 |
Meilin He, Jingping Xu, Jianxiong Chen, Lu Liu Journal of Semiconductors, 2013, 34(11): 114005. doi: 10.1088/1674-4926/34/11/114005 |
| 6 |
J. Abraham Hudson Mark, A. John Peter Journal of Semiconductors, 2012, 33(9): 092001. doi: 10.1088/1674-4926/33/9/092001 |
| 7 |
Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells Zhu Jun, Ban Shiliang, Ha Sihua Journal of Semiconductors, 2011, 32(11): 112002. doi: 10.1088/1674-4926/32/11/112002 |
| 8 |
Ha Sihua, Ban Shiliang, Zhu Jun Journal of Semiconductors, 2011, 32(4): 042001. doi: 10.1088/1674-4926/32/4/042001 |
| 9 |
Jiang Zhenyu, Dou Yuhua, Zhang Yu, Zhou Yuqin, Liu Fengzhen, et al. Journal of Semiconductors, 2009, 30(8): 084010. doi: 10.1088/1674-4926/30/8/084010 |
| 10 |
Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs Pang Lei, Pu Yan, Liu Xinyu, Wang Liang, Li Chengzhan, et al. Journal of Semiconductors, 2009, 30(5): 054001. doi: 10.1088/1674-4926/30/5/054001 |
| 11 |
Room Temperature Continuous Wave Quantum Well Lasers Zhao Huan, Du Yun, Ni Haiqiao, Zhang Shiyong, Han Qin, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 486-488. |
| 12 |
Calculation of the Efficiency of GaAs Quantum Well Solar Cells Wang Jianbo, Xiang Bing, Lou Chaogang, Zhang Xiaobing, Lei Wei, et al. Chinese Journal of Semiconductors , 2006, 27(6): 1038-1041. |
| 13 |
Characteristics of Annealing of InN Films Xie Zili, Zhang Rong, Xiu Xiangqian, Bi Zhaoxia, Liu Bin, et al. Chinese Journal of Semiconductors , 2006, 27(2): 340-344. |
| 14 |
Growth and Optical Properties of ZnO Films and Quantum Wells Zhang Baoping, Kang Junyong, Yu Jinzhong, Wang Qiming, Segawa Yusaburo, et al. Chinese Journal of Semiconductors , 2006, 27(4): 613-622. |
| 15 |
Ground-State Transition Energy in GaInNAs/GaAs Quantum Well Structures Yang Jinghai, Yang Lili, Zhang Yongjun, Liu Wenyan, Wang Dandan, et al. Chinese Journal of Semiconductors , 2006, 27(11): 1945-1949. |
| 16 |
Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes Chinese Journal of Semiconductors , 2005, 26(9): 1860-1864. |
| 17 |
Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm Chinese Journal of Semiconductors , 2005, 26(9): 1688-1691. |
| 18 |
Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing, et al. Chinese Journal of Semiconductors , 2003, 24(3): 409-412. |
| 19 |
Chinese Journal of Semiconductors , 2000, 21(10): 974-978. |
| 20 |
Chinese Journal of Semiconductors , 2000, 21(12): 1152-1156. |
Article views: 4458 Times PDF downloads: 1434 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 31 July 2007 Online: Published: 01 January 2008
| Citation: |
Wen Yuhua, Tang Jiyu, Zhao Chuanzhen, Wu Liangzhen, Kong Yunting, Tang Lili, Liu Chao, Wu Lifeng, Li Shunfang, Chen Junfang. Bandgap Energies in Strain-Free Ga1-xInxNyAs-y/GaAs QWs After Annealing[J]. Journal of Semiconductors, 2008, 29(1): 105-109.
****
Wen Y H, Tang J Y, Zhao C Z, Wu L Z, Kong Y T, Tang L L, Liu C, Wu L F, Li S F, Chen J F. Bandgap Energies in Strain-Free Ga1-xInxNyAs-y/GaAs QWs After Annealing[J]. J. Semicond., 2008, 29(1): 105.
|
WeChat ID
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
DownLoad: