Chin. J. Semicond. > 2001, Volume 22 > Issue 3 > 329-334
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一个适用于模拟电路的深亚微米SOIMOSFET器件模型

廖怀林 , 张兴 , 黄如 and 王阳元

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Key words: 器件模型, 深亚微米器件, SOIMOSFET, 模拟电路

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(3): 329-334
      廖怀林, 张兴, 黄如, 王阳元. 一个适用于模拟电路的深亚微米SOIMOSFET器件模型[J]. 半导体学报(英文版), 2001, 22(3): 329-334.
      Citation:
      廖怀林, 张兴, 黄如, 王阳元. 一个适用于模拟电路的深亚微米SOIMOSFET器件模型[J]. 半导体学报(英文版), 2001, 22(3): 329-334.
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      • Received Date: 2015-08-20

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