Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 187-191
|

Fabrication of Silicon Condenser Microphone Using Porous Silicon aa Sacrificial Layer

Ning Jin, Liu Huanzhang, Ge Yongcai and Liu Zhongli

+ Author Affiliations

PDF

Abstract: A new technology for the fabrication of silicon condenser microphones is presented. The technology is based on the use of porous silicon as sacrificial layer for the acoustic holes and the polyimide diaphragm for the acoustic membrane. The microphone with an open-circuit sensitivity of -107. 8dB and a flatter frequency response between 400Hz and 10kHz has been fabricated with this technology. The microphone can be used for acoustic communication.

Key words: silicon condenser microphone,  porous silicon,  sacrificial layer,  polyimide

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 1849 Times PDF downloads: 491 Times Cited by: 0 Times

    History

    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 187-191
      Ning Jin, Liu Huanzhang, Ge Yongcai, Liu Zhongli. Fabrication of Silicon Condenser Microphone Using Porous Silicon aa Sacrificial Layer[J]. Journal of Semiconductors, 2003, 24(S1): 187-191. ****Ning J, Liu H Z, Ge Y C, Liu Z L. Fabrication of Silicon Condenser Microphone Using Porous Silicon aa Sacrificial Layer[J]. Chin. J. Semicond., 2003, 24(S1): 187.
      Citation:
      Ning Jin, Liu Huanzhang, Ge Yongcai, Liu Zhongli. Fabrication of Silicon Condenser Microphone Using Porous Silicon aa Sacrificial Layer[J]. Journal of Semiconductors, 2003, 24(S1): 187-191. ****
      Ning J, Liu H Z, Ge Y C, Liu Z L. Fabrication of Silicon Condenser Microphone Using Porous Silicon aa Sacrificial Layer[J]. Chin. J. Semicond., 2003, 24(S1): 187.
      shu

      Fabrication of Silicon Condenser Microphone Using Porous Silicon aa Sacrificial Layer

      • Microelectronics R&D Center, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China,Microelectronics R&D Center, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China,Microelectronics R&D Center, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China and Microelectronics R&D Center, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return