Chin. J. Semicond. > 1990, Volume 11 > Issue 11 > 877-880
|

CONTENTS

提高MOSFET沟道载流子迁移率的新方法

龙伟 and 徐元森

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2779 Times PDF downloads: 674 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 November 1990

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1990  >  11(11): 877-880
      龙伟, 徐元森. 提高MOSFET沟道载流子迁移率的新方法[J]. 半导体学报(英文版), 1990, 11(11): 877-880.
      Citation:
      龙伟, 徐元森. 提高MOSFET沟道载流子迁移率的新方法[J]. 半导体学报(英文版), 1990, 11(11): 877-880.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return