Chin. J. Semicond. > 1990, Volume 11 > Issue 11 > 877-880
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提高MOSFET沟道载流子迁移率的新方法

龙伟 and 徐元森

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(11): 877-880
      龙伟, 徐元森. 提高MOSFET沟道载流子迁移率的新方法[J]. 半导体学报(英文版), 1990, 11(11): 877-880.
      Citation:
      龙伟, 徐元森. 提高MOSFET沟道载流子迁移率的新方法[J]. 半导体学报(英文版), 1990, 11(11): 877-880.
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      • Received Date: 2015-08-19

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