Chin. J. Semicond. > 2003, Volume 24 > Issue 4 > 387-390
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溅射后退火反应法制备GaN薄膜的结构与发光性质

杨莺歌 , 马洪磊 , 薛成山 , 庄惠照 , 郝晓涛 and 马瑾

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Key words: GaN薄膜, GaAs(110)衬底, 光致发光, 溅射后退火反应法

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(4): 387-390
      杨莺歌, 马洪磊, 薛成山, 庄惠照, 郝晓涛, 马瑾. 溅射后退火反应法制备GaN薄膜的结构与发光性质[J]. 半导体学报(英文版), 2003, 24(4): 387-390.
      Citation:
      杨莺歌, 马洪磊, 薛成山, 庄惠照, 郝晓涛, 马瑾. 溅射后退火反应法制备GaN薄膜的结构与发光性质[J]. 半导体学报(英文版), 2003, 24(4): 387-390.
      shu

      • Received Date: 2015-08-20

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